symbol v ds v gs i dm t j , t stg symbol ty p max 26 40 50 75 r jl 14 24 junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d -15 -13.6 -60 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage -30 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO4447 p-channel enhancement mode field effect transistor features v ds (v) = -30v i d = -15 a (v gs = -10v) max r ds(on) < 7.5m (v gs = -10v) max r ds(on) < 12m (v gs = -4v) esd rating: 4kv hbm general description the AO4447 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge. this device is suitable for use as a load switch. the device is esd protected. standard product AO4447 is pb-free (meets rohs & sony 259 specifications). AO4447l is a green product ordering option. AO4447 and AO4447l are electrically identical. soic-8 top view g s s s d d d d d s g alpha & omega semiconductor, ltd.
AO4447 symbol min typ max units bv dss -30 v -1 t j =55c -10 i gss 10 a v gs(th) -1 -1.3 -1.6 v i d(on) -60 a 6.7 8 t j =125c 9.4 12 9.2 12 m g fs 60 s v sd -0.69 -1 v i s 5.5 a c iss 5500 6600 pf c oss 745 pf c rss 473 pf r g 3.1 4 q g 88.8 120 nc q g (4.5v) 45.2 60 nc q gs 10.1 nc q gd 19.4 nc t d(on) 12 ns t r 11.5 ns t d(off) 100 ns t f 40 ns t rr 46.6 60 ns q rr 67.7 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge gate charge turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.7 , r gen =3 gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-10v, v ds =-15v, i d =- 15a gate source charge m v gs =-4v, i d =-13a i s =-1a,v gs =0v v ds =-5v, i d =-15a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-30v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-15a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-15a reverse transfer capacitance i f =-15a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 1. june 2006 alpha & omega semiconductor, ltd.
AO4447 typical electrical and thermal characteristics 0 10 20 30 40 50 60 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2.5v -3.5v -4v -10v -3v 0 5 10 15 20 25 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics -i d (a) 6 8 10 12 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-15a v gs =-4v i d =-13a 0 5 10 15 20 25 30 246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125 c v ds =-5v v gs =-4v v gs =-10v i d =-15a 25 c 125c alpha & omega semiconductor, ltd.
AO4447 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20406080100 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-15a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s alpha & omega semiconductor, ltd.
so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation alpha & omega semiconductor, ltd.
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